BUK207-50Y Datasheet and Replacement
Type Designator: BUK207-50Y
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
SOT426
- MOSFET Cross-Reference Search
BUK207-50Y Datasheet (PDF)
..1. Size:94K philips
buk207-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
5.1. Size:93K philips
buk207-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.1. Size:94K philips
buk206-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.2. Size:92K philips
buk203-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.3. Size:93K philips
buk202-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.4. Size:97K philips
buk205-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.5. Size:91K philips
buk203-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.6. Size:99K philips
buk204-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.7. Size:95K philips
buk201-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.8. Size:96K philips
buk200-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.9. Size:93K philips
buk202-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.10. Size:97K philips
buk200-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.11. Size:96K philips
buk201-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.12. Size:98K philips
buk204-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.13. Size:98K philips
buk205-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.14. Size:95K philips
buk206-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
Datasheet: BUK114-50S
, BUK116-50L
, BUK116-50S
, BUK200-50X
, BUK203-50X
, BUK203-50Y
, BUK204-50Y
, BUK207-50X
, AO4468
, BUK426-1000A
, BUK426-1000B
, BUK436W-1000B
, BUK436W-200A
, BUK436W-200B
, BUK436W-800A
, BUK436W-800B
, BUK438W-800A
.
History: AFN3009S
| IPI037N06L3G
| SIHFD9110
| KI2314EDS
| 8N60L-T2Q-T
| HSM4103
| SFS06R10NF
Keywords - BUK207-50Y MOSFET datasheet
BUK207-50Y cross reference
BUK207-50Y equivalent finder
BUK207-50Y lookup
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