SSM6N40TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM6N40TU
   Código: NN2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.6 V
   Qgⓘ - Carga de la puerta: 5.1 nC
   Cossⓘ - Capacitancia de salida: 34 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.122 Ohm
   Paquete / Cubierta: UF6

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SSM6N40TU Datasheet (PDF)

..1. Size:206K toshiba
ssm6n40tu.pdf

SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit: mm2.10.1 High-Speed Switching Applications 1.70.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance: Ron = 182m (max) (@VGS = 4 V) 2 5Ron = 122m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common)

8.1. Size:176K toshiba
ssm6n48fu.pdf

SSM6N48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N48FU Load Switching Applications Unit: mm 2.5-V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30

8.2. Size:147K toshiba
ssm6n44fe.pdf

SSM6N44FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE High Speed Switching Applications Unit: mmAnalog Switching Applications 1.60.05 Compact package suitable for high-density mounting 1.20.05 Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25

8.3. Size:187K toshiba
ssm6n42fe.pdf

SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE Power Management Switch Applications High-Speed Switching Applications : mm1.60.05 1.5V drive 1.20.05 N-ch 2-in-1 ES6 Low ON-resistance : RDS(ON) = 600 m (max) (@VGS = 1.5V) 1 6: RDS(ON) = 450 m (max) (@VGS = 1.8V) : RDS(ON) = 330 m (max) (@VGS = 2.5V)

8.4. Size:201K toshiba
ssm6n43fu.pdf

SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 (max) (@VGS = 1.5V) : RDS(ON) = 1.14 (max) (@VGS = 1.8V) : RDS(ON) = 0.85 (max) (@VGS = 2.5V) : RDS(ON) = 0.66 (max) (@VGS = 4.5V) : RDS(ON) = 0.63 (max) (@VGS = 5.0V) Absolut

8.5. Size:153K toshiba
ssm6n44fu.pdf

SSM6N44FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FU High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characterist

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