SSM6P36TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6P36TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.31 Ohm

Encapsulados: UF6

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SSM6P36TU datasheet

 ..1. Size:190K  toshiba
 ssm6p36tu.pdf pdf_icon

SSM6P36TU

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit mm Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) 2.1 0.1 Ron = 2.70 (max) (@VGS = -1.8 V) 1.7 0.1 Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5

 7.1. Size:189K  toshiba
 ssm6p36fe.pdf pdf_icon

SSM6P36TU

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) Unit mm Ron = 2.70 (max) (@VGS = -1.8 V) 1.6 0.05 Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 6 (Common t

 8.1. Size:194K  toshiba
 ssm6p35fu.pdf pdf_icon

SSM6P36TU

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance Ron = 44 (max) (@VGS = -1.2 V) Ron = 22 (max) (@VGS = -1.5 V) Ron = 11 (max) (@VGS = -2.5 V) Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2

 8.2. Size:202K  toshiba
 ssm6p39tu.pdf pdf_icon

SSM6P36TU

SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit mm Power Management Switch Applications 2.1 0.1 High-Speed Switching Applications 1.7 0.1 1 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance Ron = 430m (max) (@VGS = 1.8 V) 3 4 Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso

MOSTRAR MÁS

Otros transistores... SSM6P16FE, SSM6P16FU, SSM6P25TU, SSM6P26TU, SSM6P28TU, SSM6P35FE, SSM6P35FU, SSM6P36FE, TK10A60D, SSM6P39TU, SSM6P40TU, SSM6P41FE, SSM6P47NU, SSM6P49NU, SSM6P54TU, TJ10S04M3L, TJ11A10M3