TK11A50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK11A50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK11A50D

TK11A50D Datasheet (PDF)

..1. Size:173K toshiba
tk11a50d.pdf

TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A50D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth

..2. Size:252K inchange semiconductor
tk11a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A50DITK11A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.45 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

8.1. Size:179K toshiba
tk11a55d.pdf

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.1. Size:195K toshiba
tk11a60d.pdf

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.2. Size:237K toshiba
tk11a65w.pdf

TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

9.3. Size:192K toshiba
tk11a45d.pdf

TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) 3.2 0.2 A High forward transfer admittance: Yfs = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vt

9.4. Size:328K toshiba
tk11a65d.pdf

TK11A65DMOSFETs Silicon N-Channel MOS (-MOS)TK11A65DTK11A65DTK11A65DTK11A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: ID

9.5. Size:253K inchange semiconductor
tk11a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A60DITK11A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.54 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.6. Size:253K inchange semiconductor
tk11a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A65WITK11A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.39Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

9.7. Size:252K inchange semiconductor
tk11a45d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A45DITK11A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

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