TK11A50D Specs and Replacement

Type Designator: TK11A50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220SIS

TK11A50D substitution

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TK11A50D datasheet

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TK11A50D

TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK11A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth... See More ⇒

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TK11A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A50D ITK11A50D FEATURES Low drain-source on-resistance RDS(on) = 0.45 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

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TK11A50D

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK11A55D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.52 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 9.1. Size:195K  toshiba
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TK11A50D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK11A60D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)... See More ⇒

Detailed specifications: TK100F04K3, TK100F06K3, TK10A50D, TK10A55D, TK10A60D, TK10S04K3L, TK10X40D, TK11A45D, IRLB3034, TK11A55D, TK11A60D, TK11A65D, TK12A10K3, TK12A45D, TK12A50D, TK12A53D, TK12A55D

Keywords - TK11A50D MOSFET specs

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