TK12A50D Todos los transistores

 

TK12A50D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK12A50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO220SIS
 

 Búsqueda de reemplazo de TK12A50D MOSFET

   - Selección ⓘ de transistores por parámetros

 

TK12A50D datasheet

 ..1. Size:254K  toshiba
 tk12a50d.pdf pdf_icon

TK12A50D

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 0.1. Size:276K  toshiba
 tk12a50d5.pdf pdf_icon

TK12A50D

TK12A50D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A50D5 TK12A50D5 TK12A50D5 TK12A50D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) (3) High

 0.2. Size:253K  inchange semiconductor
 tk12a50d5.pdf pdf_icon

TK12A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A50D5 ITK12A50D5 FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 7.1. Size:238K  toshiba
 tk12a50w.pdf pdf_icon

TK12A50D

TK12A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A50W TK12A50W TK12A50W TK12A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

MOSTRAR MÁS

Otros transistores... TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D , TK11A65D , TK12A10K3 , TK12A45D , RU7088R , TK12A53D , TK12A55D , TK12A60D , TK12A60U , TK12A65D , TK12E60U , TK12J55D , TK12J60U .

History: PJP5NA50 | BRCS150N12SZC | SDF9N100JEB-D

 

 
Back to Top

 


 
.