TK12A50D Specs and Replacement

Type Designator: TK12A50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO220SIS

TK12A50D substitution

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TK12A50D datasheet

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TK12A50D

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

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TK12A50D

TK12A50D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A50D5 TK12A50D5 TK12A50D5 TK12A50D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) (3) High ... See More ⇒

 0.2. Size:253K  inchange semiconductor
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TK12A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A50D5 ITK12A50D5 FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

 7.1. Size:238K  toshiba
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TK12A50D

TK12A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A50W TK12A50W TK12A50W TK12A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

Detailed specifications: TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D, TK11A65D, TK12A10K3, TK12A45D, RU7088R, TK12A53D, TK12A55D, TK12A60D, TK12A60U, TK12A65D, TK12E60U, TK12J55D, TK12J60U

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.