TK12A60D Todos los transistores

 ..1. Size:185K  toshiba
 tk12a60d.pdf

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

 ..2. Size:255K  inchange semiconductor
 tk12a60d.pdf

isc N-Channel MOSFET Transistor TK12A60D FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 7.1. Size:241K  toshiba
 tk12a60w.pdf

TK12A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A60W TK12A60W TK12A60W TK12A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.2. Size:179K  toshiba
 tk12a60u.pdf

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

 7.3. Size:253K  inchange semiconductor
 tk12a60w.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60W,ITK12A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.265 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regu

 7.4. Size:252K  inchange semiconductor
 tk12a60u.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60U,ITK12A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.4 Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching