TK12A60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK12A60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO220SIS

 Búsqueda de reemplazo de TK12A60U MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK12A60U datasheet

 ..1. Size:179K  toshiba
 tk12a60u.pdf pdf_icon

TK12A60U

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

 ..2. Size:252K  inchange semiconductor
 tk12a60u.pdf pdf_icon

TK12A60U

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60U,ITK12A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.4 Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching

 7.1. Size:241K  toshiba
 tk12a60w.pdf pdf_icon

TK12A60U

TK12A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A60W TK12A60W TK12A60W TK12A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.2. Size:185K  toshiba
 tk12a60d.pdf pdf_icon

TK12A60U

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

MOSTRAR MÁS

Otros transistores... TK11A60D, TK11A65D, TK12A10K3, TK12A45D, TK12A50D, TK12A53D, TK12A55D, TK12A60D, 60N06, TK12A65D, TK12E60U, TK12J55D, TK12J60U, TK12X53D, TK12X60U, TK130F06K3, TK13A25D