All MOSFET. TK12A60U Datasheet

 

TK12A60U Datasheet and Replacement


   Type Designator: TK12A60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220SIS
 

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TK12A60U Datasheet (PDF)

 ..1. Size:179K  toshiba
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TK12A60U

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK12A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

 ..2. Size:252K  inchange semiconductor
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TK12A60U

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60U,ITK12A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.4Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching

 7.1. Size:241K  toshiba
tk12a60w.pdf pdf_icon

TK12A60U

TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:185K  toshiba
tk12a60d.pdf pdf_icon

TK12A60U

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A60D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

Datasheet: TK11A60D , TK11A65D , TK12A10K3 , TK12A45D , TK12A50D , TK12A53D , TK12A55D , TK12A60D , AO4468 , TK12A65D , TK12E60U , TK12J55D , TK12J60U , TK12X53D , TK12X60U , TK130F06K3 , TK13A25D .

History: SQS464EEN | NTLUD3A260PZ | 2SJ607 | GSM9435WS | VBZE20P03 | STF20NK50Z | HMS29N65F

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