TK13A25D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK13A25D
   Código: K13A25D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK13A25D

TK13A25D Datasheet (PDF)

..1. Size:228K toshiba
tk13a25d.pdf

TK13A25DMOSFETs Silicon N-Channel MOS (-MOS)TK13A25DTK13A25DTK13A25DTK13A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

..2. Size:252K inchange semiconductor
tk13a25d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A25DITK13A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.19 (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA

9.1. Size:184K toshiba
tk13a50d.pdf

TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode

9.2. Size:191K toshiba
tk13a60d.pdf

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

9.3. Size:226K toshiba
tk13a65d.pdf

TK13A65DMOSFETs Silicon N-Channel MOS (-MOS)TK13A65DTK13A65DTK13A65DTK13A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.4 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: IDS

9.4. Size:191K toshiba
tk13a55da.pdf

TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

9.5. Size:177K toshiba
tk13a50da.pdf

TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

9.6. Size:213K toshiba
tk13a65u.pdf

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod

9.7. Size:181K toshiba
tk13a45d.pdf

TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.38 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.8. Size:252K inchange semiconductor
tk13a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A60DITK13A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.33 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.9. Size:255K inchange semiconductor
tk13a60w.pdf

isc N-Channel MOSFET Transistor TK13A60WFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

9.10. Size:257K inchange semiconductor
tk13a65d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65DITK13A65DFEATURESLow drain-source on-resistance:RDS(on) = 0.4 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

9.11. Size:253K inchange semiconductor
tk13a50da.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A50DAITK13A50DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.39 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RAT

9.12. Size:253K inchange semiconductor
tk13a65u.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65UITK13A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.32 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSw

9.13. Size:253K inchange semiconductor
tk13a45d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A45DITK13A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.38 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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