All MOSFET. TK13A25D Datasheet

 

TK13A25D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK13A25D
   Marking Code: K13A25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO220SIS

 TK13A25D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK13A25D Datasheet (PDF)

 ..1. Size:228K  toshiba
 tk13a25d.pdf

TK13A25D TK13A25D

TK13A25DMOSFETs Silicon N-Channel MOS (-MOS)TK13A25DTK13A25DTK13A25DTK13A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
 tk13a25d.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A25DITK13A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.19 (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA

 9.1. Size:184K  toshiba
 tk13a50d.pdf

TK13A25D TK13A25D

TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode

 9.2. Size:191K  toshiba
 tk13a60d.pdf

TK13A25D TK13A25D

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

 9.3. Size:226K  toshiba
 tk13a65d.pdf

TK13A25D TK13A25D

TK13A65DMOSFETs Silicon N-Channel MOS (-MOS)TK13A65DTK13A65DTK13A65DTK13A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.4 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: IDS

 9.4. Size:191K  toshiba
 tk13a55da.pdf

TK13A25D TK13A25D

TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

 9.5. Size:177K  toshiba
 tk13a50da.pdf

TK13A25D TK13A25D

TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

 9.6. Size:213K  toshiba
 tk13a65u.pdf

TK13A25D TK13A25D

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod

 9.7. Size:181K  toshiba
 tk13a45d.pdf

TK13A25D TK13A25D

TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.38 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.8. Size:252K  inchange semiconductor
 tk13a60d.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A60DITK13A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.33 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 9.9. Size:255K  inchange semiconductor
 tk13a60w.pdf

TK13A25D TK13A25D

isc N-Channel MOSFET Transistor TK13A60WFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.10. Size:257K  inchange semiconductor
 tk13a65d.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65DITK13A65DFEATURESLow drain-source on-resistance:RDS(on) = 0.4 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.11. Size:253K  inchange semiconductor
 tk13a50da.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A50DAITK13A50DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.39 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RAT

 9.12. Size:253K  inchange semiconductor
 tk13a65u.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65UITK13A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.32 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSw

 9.13. Size:253K  inchange semiconductor
 tk13a45d.pdf

TK13A25D TK13A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A45DITK13A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.38 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top