TK13A50DA Todos los transistores

 ..1. Size:177K  toshiba
 tk13a50da.pdf

TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK13A50DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.39 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

 ..2. Size:253K  inchange semiconductor
 tk13a50da.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A50DA ITK13A50DA FEATURES Low drain-source on-resistance RDS(ON) = 0.39 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RAT

 6.1. Size:184K  toshiba
 tk13a50d.pdf

TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK13A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode

 8.1. Size:191K  toshiba
 tk13a55da.pdf

TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK13A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vt

 9.1. Size:228K  toshiba
 tk13a25d.pdf

TK13A25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK13A25D TK13A25D TK13A25D TK13A25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth =

 9.2. Size:191K  toshiba
 tk13a60d.pdf

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK13A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.33 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

 9.3. Size:226K  toshiba
 tk13a65d.pdf

TK13A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK13A65D TK13A65D TK13A65D TK13A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.4 (typ.) (2) High forward transfer admittance Yfs = 7.5 S (typ.) (3) Low leakage current IDS

 9.4. Size:213K  toshiba
 tk13a65u.pdf

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 8.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod

 9.5. Size:181K  toshiba
 tk13a45d.pdf

TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK13A45D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.38 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.6. Size:252K  inchange semiconductor
 tk13a25d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A25D ITK13A25D FEATURES Low drain-source on-resistance RDS(ON) = 0.19 (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MA

 9.7. Size:252K  inchange semiconductor
 tk13a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A60D ITK13A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.33 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

 9.8. Size:255K  inchange semiconductor
 tk13a60w.pdf

isc N-Channel MOSFET Transistor TK13A60W FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.9. Size:257K  inchange semiconductor
 tk13a65d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A65D ITK13A65D FEATURES Low drain-source on-resistance RDS(on) = 0.4 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

 9.10. Size:253K  inchange semiconductor
 tk13a65u.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A65U ITK13A65U FEATURES Low drain-source on-resistance RDS(ON) = 0.32 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 650 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Sw

 9.11. Size:253K  inchange semiconductor
 tk13a45d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK13A45D ITK13A45D FEATURES Low drain-source on-resistance RDS(ON) = 0.38 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS