TK13A50DA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK13A50DA
Маркировка: K13A50DA
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 12.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.47 Ohm
Тип корпуса: TO220SIS
TK13A50DA Datasheet (PDF)
tk13a50da.pdf
TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA
tk13a50da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A50DAITK13A50DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.39 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RAT
tk13a50d.pdf
TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode
tk13a55da.pdf
TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt
tk13a25d.pdf
TK13A25DMOSFETs Silicon N-Channel MOS (-MOS)TK13A25DTK13A25DTK13A25DTK13A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =
tk13a60d.pdf
TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab
tk13a65d.pdf
TK13A65DMOSFETs Silicon N-Channel MOS (-MOS)TK13A65DTK13A65DTK13A65DTK13A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.4 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: IDS
tk13a65u.pdf
TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod
tk13a45d.pdf
TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.38 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk13a25d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A25DITK13A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.19 (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA
tk13a60d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A60DITK13A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.33 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk13a60w.pdf
isc N-Channel MOSFET Transistor TK13A60WFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
tk13a65d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65DITK13A65DFEATURESLow drain-source on-resistance:RDS(on) = 0.4 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
tk13a65u.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65UITK13A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.32 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSw
tk13a45d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A45DITK13A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.38 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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