TK15A20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK15A20D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO220SIS

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TK15A20D Datasheet (PDF)

..1. Size:232K toshiba
tk15a20d.pdf

TK15A20DMOSFETs Silicon N-Channel MOS (-MOS)TK15A20DTK15A20DTK15A20DTK15A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

9.1. Size:188K toshiba
tk15a50d.pdf

TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

9.2. Size:189K toshiba
tk15a60d.pdf

TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth

9.3. Size:1269K toshiba
tk15a60u.pdf

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

9.4. Size:257K inchange semiconductor
tk15a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK15A50DITK15A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.24 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.5. Size:252K inchange semiconductor
tk15a60u.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK15A60U, ITK15A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.3 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION

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