All MOSFET. TK15A20D Datasheet

 

TK15A20D Datasheet and Replacement


   Type Designator: TK15A20D
   Marking Code: K15A20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220SIS
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TK15A20D Datasheet (PDF)

 ..1. Size:232K  toshiba
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TK15A20D

TK15A20DMOSFETs Silicon N-Channel MOS (-MOS)TK15A20DTK15A20DTK15A20DTK15A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

 9.1. Size:188K  toshiba
 tk15a50d.pdf pdf_icon

TK15A20D

TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 9.2. Size:189K  toshiba
 tk15a60d.pdf pdf_icon

TK15A20D

TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth

 9.3. Size:1269K  toshiba
 tk15a60u.pdf pdf_icon

TK15A20D

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: TJ150F04M3L | TK12D60U

Keywords - TK15A20D MOSFET datasheet

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