TK20J50D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK20J50D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: SC65 TO3P

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TK20J50D datasheet

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TK20J50D

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK20J50D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (V

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TK20J50D

isc N-Channel MOSFET Transistor TK20J50D DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching voltage regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT

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 tk20j60w5.pdf pdf_icon

TK20J50D

TK20J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W5 TK20J60W5 TK20J60W5 TK20J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

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 tk20j60w.pdf pdf_icon

TK20J50D

TK20J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20J60W TK20J60W TK20J60W TK20J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

MOSTRAR MÁS

Otros transistores... TK18A60V, TK19A45D, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U, TK20E60U, K4145, TK20J60U, TK20P04M1, TK20S04K3L, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D, TK2A65D