TK25A20D Todos los transistores

 ..1. Size:219K  toshiba
 tk25a20d.pdf

TK25A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK25A20D TK25A20D TK25A20D TK25A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.047 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

 ..2. Size:252K  inchange semiconductor
 tk25a20d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK25A20D ITK25A20D FEATURES Low drain-source on-resistance RDS(on) = 0.047 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 9.1. Size:236K  toshiba
 tk25a60x.pdf

TK25A60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25A60X TK25A60X TK25A60X TK25A60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

 9.2. Size:305K  toshiba
 tk25a10k3.pdf

TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance RDS (ON) = 31 m (typ.) Unit mm High forward transfer admittance Yfs = 50 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 9.3. Size:363K  toshiba
 tk25a60x5.pdf

TK25A60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25A60X5 TK25A60X5 TK25A60X5 TK25A60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc

 9.4. Size:253K  inchange semiconductor
 tk25a60x.pdf

 9.5. Size:252K  inchange semiconductor
 tk25a10k3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK25A10K3 ITK25A10K3 FEATURES Low drain-source on-resistance RDS(ON) = 31m (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATIN

 9.6. Size:253K  inchange semiconductor
 tk25a60x5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25A60X5, ITK25A60X5 FEATURES Low drain-source on-resistance RDS(ON) = 0.12 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula