TK25A20D. Аналоги и основные параметры

Наименование производителя: TK25A20D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 73 ns

Cossⓘ - Выходная емкость: 180 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm

Тип корпуса: TO220SIS

Аналог (замена) для TK25A20D

- подборⓘ MOSFET транзистора по параметрам

 

TK25A20D даташит

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 tk25a20d.pdf pdf_icon

TK25A20D

TK25A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK25A20D TK25A20D TK25A20D TK25A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.047 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

 ..2. Size:252K  inchange semiconductor
 tk25a20d.pdf pdf_icon

TK25A20D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK25A20D ITK25A20D FEATURES Low drain-source on-resistance RDS(on) = 0.047 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 9.1. Size:236K  toshiba
 tk25a60x.pdf pdf_icon

TK25A20D

TK25A60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25A60X TK25A60X TK25A60X TK25A60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

 9.2. Size:305K  toshiba
 tk25a10k3.pdf pdf_icon

TK25A20D

TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance RDS (ON) = 31 m (typ.) Unit mm High forward transfer admittance Yfs = 50 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

ПОКАЗАТЬ ЕЩЁ

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