TK3A65DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK3A65DA
Código: K3A65DA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.4 VQgⓘ - Carga de la puerta: 11 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.51 Ohm
Paquete / Cubierta: TO220SIS
Búsqueda de reemplazo de MOSFET TK3A65DA
TK3A65DA Datasheet (PDF)
tk3a65da.pdf
TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth =
tk3a65da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DAITK3A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk3a65d.pdf
TK3A65DMOSFETs Silicon N-Channel MOS (-MOS)TK3A65DTK3A65DTK3A65DTK3A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage current: IDSS =
tk3a65d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DITK3A65DFEATURESLow drain-source on-resistance:RDS(ON) = 1.93 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk3a60da.pdf
TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abso
tk3a60da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A60DAITK3A60DAFEATURESLow drain-source on-resistance:RDS(on) = 2.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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