TK3A65DA - параметры транзистора MOSFET, его аналоги, datasheet

TK3A65DA Datasheet (PDF)

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TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth =

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DAITK3A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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TK3A65DMOSFETs Silicon N-Channel MOS (-MOS)TK3A65DTK3A65DTK3A65DTK3A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage current: IDSS =

7.2. Size:252K inchange semiconductor
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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DITK3A65DFEATURESLow drain-source on-resistance:RDS(ON) = 1.93 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T