TK40A10K3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK40A10K3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO220SIS

 Búsqueda de reemplazo de TK40A10K3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK40A10K3 datasheet

 ..1. Size:202K  toshiba
 tk40a10k3.pdf pdf_icon

TK40A10K3

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK40A10K3 Switching Regulator Application Unit mm Low drain-source ON resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 80 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 7.1. Size:177K  toshiba
 tk40a10j1.pdf pdf_icon

TK40A10K3

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40A10J1 Switching Regulator Applications Unit mm Small gate charge Qg = 76nC (typ.) Low drain-source ON-resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 90 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement m

 7.2. Size:233K  toshiba
 tk40a10n1.pdf pdf_icon

TK40A10K3

TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40A10N1 TK40A10N1 TK40A10N1 TK40A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

 7.3. Size:252K  inchange semiconductor
 tk40a10n1.pdf pdf_icon

TK40A10K3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40A10N1 ITK40A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... TK30S06K3L, TK35S04K3L, TK3A60DA, TK3A65DA, TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, 5N60, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, TK40M60U, TK40P03M1, TK40P04M1, TK40S10K3Z