TK40A10K3 Specs and Replacement

Type Designator: TK40A10K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO220SIS

TK40A10K3 substitution

- MOSFET ⓘ Cross-Reference Search

 

TK40A10K3 datasheet

 ..1. Size:202K  toshiba
tk40a10k3.pdf pdf_icon

TK40A10K3

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK40A10K3 Switching Regulator Application Unit mm Low drain-source ON resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 80 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒

 7.1. Size:177K  toshiba
tk40a10j1.pdf pdf_icon

TK40A10K3

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40A10J1 Switching Regulator Applications Unit mm Small gate charge Qg = 76nC (typ.) Low drain-source ON-resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 90 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement m... See More ⇒

 7.2. Size:233K  toshiba
tk40a10n1.pdf pdf_icon

TK40A10K3

TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40A10N1 TK40A10N1 TK40A10N1 TK40A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha... See More ⇒

 7.3. Size:252K  inchange semiconductor
tk40a10n1.pdf pdf_icon

TK40A10K3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40A10N1 ITK40A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

Detailed specifications: TK30S06K3L, TK35S04K3L, TK3A60DA, TK3A65DA, TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, 5N60, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, TK40M60U, TK40P03M1, TK40P04M1, TK40S10K3Z

Keywords - TK40A10K3 MOSFET specs

 TK40A10K3 cross reference

 TK40A10K3 equivalent finder

 TK40A10K3 pdf lookup

 TK40A10K3 substitution

 TK40A10K3 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.