TK40A10K3 Datasheet and Replacement. Cross Reference Search

TK40A10K3 Datasheet (PDF)

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TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK40A10K3 Switching Regulator Application Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

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TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40A10J1 Switching Regulator Applications Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement m

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TK40A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A10N1TK40A10N1TK40A10N1TK40A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A10N1ITK40A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

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