TK4A55DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK4A55DA
   Código: K4A55DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.45 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK4A55DA

TK4A55DA Datasheet (PDF)

..1. Size:190K toshiba
tk4a55da.pdf

TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

..2. Size:252K inchange semiconductor
tk4a55da.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DAITK4A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

7.1. Size:189K toshiba
tk4a55d.pdf

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode

7.2. Size:252K inchange semiconductor
tk4a55d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DITK4A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.5 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:211K toshiba
tk4a50d.pdf

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute

9.2. Size:189K toshiba
tk4a53d.pdf

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2

9.3. Size:252K inchange semiconductor
tk4a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A50DITK4A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.4. Size:252K inchange semiconductor
tk4a53d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A53DITK4A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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