TK4A65DA Todos los transistores

 

TK4A65DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK4A65DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: TO220SIS
 

 Búsqueda de reemplazo de TK4A65DA MOSFET

   - Selección ⓘ de transistores por parámetros

 

TK4A65DA Datasheet (PDF)

 ..1. Size:204K  toshiba
 tk4a65da.pdf pdf_icon

TK4A65DA

TK4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 1.9 S (typ.) Low leakage current: IDSS = 10 A(max) (VDS = 650 V) Enhancement mode: Vth = 2

 9.1. Size:190K  toshiba
 tk4a60db.pdf pdf_icon

TK4A65DA

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth

 9.2. Size:188K  toshiba
 tk4a60d.pdf pdf_icon

TK4A65DA

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

 9.3. Size:199K  toshiba
 tk4a60da.pdf pdf_icon

TK4A65DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

MOSTRAR MÁS

Otros transistores... TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , TK4A60D , MMIS60R580P , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 .

History: JCS20N65WH | WMB099N10HGS | PP9H06BV

 

 
Back to Top

 


 
.