TK4A65DA Todos los transistores

 ..1. Size:204K  toshiba
 tk4a65da.pdf

TK4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A65DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 1.9 S (typ.) Low leakage current IDSS = 10 A(max) (VDS = 650 V) Enhancement mode Vth = 2

 9.1. Size:190K  toshiba
 tk4a60db.pdf

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DB Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600V) Enhancement mode Vth

 9.2. Size:188K  toshiba
 tk4a60d.pdf

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

 9.3. Size:199K  toshiba
 tk4a60da.pdf

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 9.4. Size:253K  inchange semiconductor
 tk4a60db.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60DB ITK4A60DB FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 9.5. Size:258K  inchange semiconductor
 tk4a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60D ITK4A60D FEATURES Low drain-source on-resistance RDS(ON) = 1.4 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 9.6. Size:253K  inchange semiconductor
 tk4a60da.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60DA ITK4A60DA FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING