Справочник MOSFET. TK4A65DA

 

TK4A65DA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK4A65DA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
   Тип корпуса: TO220SIS
 

 Аналог (замена) для TK4A65DA

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK4A65DA Datasheet (PDF)

 ..1. Size:204K  toshiba
 tk4a65da.pdf pdf_icon

TK4A65DA

TK4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 1.9 S (typ.) Low leakage current: IDSS = 10 A(max) (VDS = 650 V) Enhancement mode: Vth = 2

 9.1. Size:190K  toshiba
 tk4a60db.pdf pdf_icon

TK4A65DA

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth

 9.2. Size:188K  toshiba
 tk4a60d.pdf pdf_icon

TK4A65DA

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

 9.3. Size:199K  toshiba
 tk4a60da.pdf pdf_icon

TK4A65DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , TK4A60D , MMIS60R580P , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 .

History: OSG65R2K4PF | 2SK2419 | AON6754

 

 
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