TK4P55D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK4P55D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.88 Ohm

Encapsulados: DPAK

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TK4P55D datasheet

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 tk4p55d.pdf pdf_icon

TK4P55D

TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P55D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode Vth = 2.4 to 4.

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 tk4p55da.pdf pdf_icon

TK4P55D

TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P55DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 1.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.4 to 4.4

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 tk4p50d.pdf pdf_icon

TK4P55D

TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 1.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.4 to 4

Otros transistores... TK4A55DA, TK4A55D, TK4A60DA, TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, IRF830, TK4P60DA, TK4P60DB, TK50J30D, TK50J60U, TK50P03M1, TK50P04M1, TK50X15J1, TK55A10J1