TK4P55D - параметры транзистора MOSFET, его аналоги, datasheet

TK4P55D Datasheet (PDF)

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TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode: Vth = 2.4 to 4.

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TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.4 to 4.4

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TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .