TK4P55D - параметры транзистора MOSFET, его аналоги, datasheet

TK4P55D Datasheet (PDF)

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TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode: Vth = 2.4 to 4.

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TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.4 to 4.4

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TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4

Другие MOSFET... TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , TK4A60D , TK4A65DA , TK4P50D , TK4P55DA , IRF1405 , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , TK55A10J1 .