TK4P60DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK4P60DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: DPAK

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TK4P60DA datasheet

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TK4P60DA

TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4

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TK4P60DA

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK4P60DA FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

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TK4P60DA

TK4P60D MOSFETs Silicon N-Channel MOS ( -MOS ) TK4P60D TK4P60D TK4P60D TK4P60D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.4 (typ.) (2) High forward transfer admittance Yfs = 2.5 S (typ.) (3) Low leakage current IDSS = 1

 7.2. Size:208K  toshiba
 tk4p60db.pdf pdf_icon

TK4P60DA

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DB Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to

MOSTRAR MÁS

Otros transistores... TK4A55D, TK4A60DA, TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, IRLB3034, TK4P60DB, TK50J30D, TK50J60U, TK50P03M1, TK50P04M1, TK50X15J1, TK55A10J1, TK5A45DA