TK50P03M1 Todos los transistores

 

TK50P03M1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK50P03M1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: DPAK
 

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TK50P03M1 Datasheet (PDF)

 ..1. Size:242K  toshiba
 tk50p03m1.pdf pdf_icon

TK50P03M1

TK50P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P03M1TK50P03M1TK50P03M1TK50P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10

 7.1. Size:696K  first silicon
 ftk50p03pdfn56.pdf pdf_icon

TK50P03M1

SEMICONDUCTORFTK50P03PDFN56TECHNICAL DATAP-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 7.2. Size:927K  jiejie micro
 jmtk50p03a.pdf pdf_icon

TK50P03M1

JMTK50P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -50A Load SwitchRDS(ON)

 8.1. Size:238K  toshiba
 tk50p04m1.pdf pdf_icon

TK50P03M1

TK50P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P04M1TK50P04M1TK50P04M1TK50P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 9.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.7 m (t

MOSTRAR MÁS

Otros transistores... TK4A65DA , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , IRF9640 , TK50P04M1 , TK50X15J1 , TK55A10J1 , TK5A45DA , TK5A50D , TK5A53D , TK5A55D , TK5A60D .

History: IRLML0060TRPBF | RFD16N05LSM | CS2N60D | STH3N150-2

 

 
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