TK50P03M1
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK50P03M1
Marking Code: K50P03M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 47
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25.3
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
DPAK
TK50P03M1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK50P03M1
Datasheet (PDF)
..1. Size:242K toshiba
tk50p03m1.pdf
TK50P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P03M1TK50P03M1TK50P03M1TK50P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10
7.1. Size:696K first silicon
ftk50p03pdfn56.pdf
SEMICONDUCTORFTK50P03PDFN56TECHNICAL DATAP-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte
8.1. Size:238K toshiba
tk50p04m1.pdf
TK50P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P04M1TK50P04M1TK50P04M1TK50P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 9.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.7 m (t
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