TK50P03M1 Datasheet and Replacement. Cross Reference Search

TK50P03M1 Datasheet (PDF)

..1. Size:242K toshiba
tk50p03m1.pdf pdf_icon

TK50P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P03M1TK50P03M1TK50P03M1TK50P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10

7.1. Size:696K first silicon
ftk50p03pdfn56.pdf pdf_icon

SEMICONDUCTORFTK50P03PDFN56TECHNICAL DATAP-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

7.2. Size:927K jiejie micro
jmtk50p03a.pdf pdf_icon

JMTK50P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -50A Load SwitchRDS(ON)

8.1. Size:238K toshiba
tk50p04m1.pdf pdf_icon

TK50P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P04M1TK50P04M1TK50P04M1TK50P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 9.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.7 m (t