TK6A55DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK6A55DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.48 Ohm

Encapsulados: TO220SIS

 Búsqueda de reemplazo de TK6A55DA MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK6A55DA datasheet

 ..1. Size:187K  toshiba
tk6a55da.pdf pdf_icon

TK6A55DA

TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.25 (typ.) High forward transfer admittance Yfs = 3.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth

 9.1. Size:172K  toshiba
tk6a50d.pdf pdf_icon

TK6A55DA

TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth

 9.2. Size:183K  toshiba
tk6a53d.pdf pdf_icon

TK6A55DA

TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth =

 9.3. Size:252K  inchange semiconductor
tk6a50d.pdf pdf_icon

TK6A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A50D ITK6A50D FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... TK60J25D, TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D, IRLZ44N, TK6A60D, TK6A65D, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3