TK6A55DA - аналоги, даташиты, параметры транзистора

TK6A55DA Datasheet (PDF)

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TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.25 (typ.) High forward transfer admittance Yfs = 3.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth

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TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth

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TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth =

9.3. Size:252K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A50D ITK6A50D FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T