Справочник MOSFET. TK6A55DA

 

TK6A55DA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK6A55DA
   Маркировка: K6A55DA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.48 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK6A55DA

 

 

TK6A55DA Datasheet (PDF)

 ..1. Size:187K  toshiba
 tk6a55da.pdf

TK6A55DA TK6A55DA

TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth

 9.1. Size:172K  toshiba
 tk6a50d.pdf

TK6A55DA TK6A55DA

TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth

 9.2. Size:183K  toshiba
 tk6a53d.pdf

TK6A55DA TK6A55DA

TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

 9.3. Size:252K  inchange semiconductor
 tk6a50d.pdf

TK6A55DA TK6A55DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A50DITK6A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.4. Size:252K  inchange semiconductor
 tk6a53d.pdf

TK6A55DA TK6A55DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A53DITK6A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.1 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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