TK8A50DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK8A50DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.04 Ohm
   Paquete / Cubierta: TO220SIS

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TK8A50DA Datasheet (PDF)

..1. Size:209K toshiba
tk8a50da.pdf

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50DA Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.76 (typ.) High forward transfer admittance: Yfs = 4.1 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode:

7.1. Size:180K toshiba
tk8a50d.pdf

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

7.2. Size:253K inchange semiconductor
tk8a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A50DITK8A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:201K toshiba
tk8a55da.pdf

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

9.2. Size:258K inchange semiconductor
tk8a55da.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A55DAITK8A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.9 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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