TK8A50DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK8A50DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.04 Ohm

Encapsulados: TO220SIS

 Búsqueda de reemplazo de TK8A50DA MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK8A50DA datasheet

 ..1. Size:209K  toshiba
 tk8a50da.pdf pdf_icon

TK8A50DA

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.76 (typ.) High forward transfer admittance Yfs = 4.1 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode

 7.1. Size:180K  toshiba
 tk8a50d.pdf pdf_icon

TK8A50DA

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 7.2. Size:253K  inchange semiconductor
 tk8a50d.pdf pdf_icon

TK8A50DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A50D ITK8A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.7 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:201K  toshiba
 tk8a55da.pdf pdf_icon

TK8A50DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth =

MOSTRAR MÁS

Otros transistores... TK80F08K3, TK80S04K3L, TK80S06K3L, TK80X04K3, TK8A10K3, TK8A25DA, TK8A45DA, TK8A45D, K3569, TK8A50D, TK8A55DA, TK8A60DA, TK8A65D, TK8P25DA, TK8S06K3L, TK9A45D, TK9A55DA