TK8A50DA MOSFET PDF: N-Ch, 500V, 7.5A. Datasheet. Full specification with pinout and replacement list

TK8A50DA Specs and Replacement

   Type Designator: TK8A50DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.04 Ohm
   Package: TO220SIS

TK8A50DA substitution

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TK8A50DA datasheet

..1. Size:209K toshiba
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TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.76 (typ.) High forward transfer admittance Yfs = 4.1 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode ... See More ⇒

7.1. Size:180K toshiba
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TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒

7.2. Size:253K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A50D ITK8A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.7 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

9.1. Size:201K toshiba
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TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = ... See More ⇒