All MOSFET. TK8A50DA Datasheet

 

TK8A50DA Datasheet and Replacement


   Type Designator: TK8A50DA
   Marking Code: K8A50DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.04 Ohm
   Package: TO220SIS
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TK8A50DA Datasheet (PDF)

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TK8A50DA

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50DA Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.76 (typ.) High forward transfer admittance: Yfs = 4.1 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode:

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TK8A50DA

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

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TK8A50DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A50DITK8A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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TK8A50DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NDD04N50Z | STF8NM60ND

Keywords - TK8A50DA MOSFET datasheet

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 TK8A50DA equivalent finder
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