BUK455-200A Todos los transistores

 

BUK455-200A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK455-200A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.23 Ohm

Empaquetado / Estuche: SOT78

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BUK455-200A Datasheet (PDF)

1.1. buk455-200b.pdf Size:53K _update_mosfet

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS),

1.2. buk455-200a-b 1.pdf Size:54K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS), mot

 3.1. buk455-100b.pdf Size:48K _update_mosfet

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS),

3.2. buk455-60a-b 1.pdf Size:56K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor co

 3.3. buk455-60h 1.pdf Size:71K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product specification PowerMOS transistor BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mode P

3.4. buk455-100a-b 1.pdf Size:54K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS), mot

Otros transistores... BUK446-1000B , BUK446-800A , BUK446-800B , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , IRF1404 , BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A .

 

 
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