All MOSFET. BUK455-200A Datasheet

 

BUK455-200A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK455-200A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: SOT78

BUK455-200A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK455-200A Datasheet (PDF)

1.1. buk455-200a-b 1.pdf Size:54K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS), mot

3.1. buk455-60h 1.pdf Size:71K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product specification PowerMOS transistor BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mode P

3.2. buk455-60a-b 1.pdf Size:56K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 41 38 A (SMPS), motor co

 3.3. buk455-100a-b 1.pdf Size:54K _philips

BUK455-200A
BUK455-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 26 23 A (SMPS), mot

Datasheet: BUK446-1000B , BUK446-800A , BUK446-800B , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , IRF1404 , BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A .

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