TK8A65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK8A65D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.84 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK8A65D

TK8A65D Datasheet (PDF)

..1. Size:191K toshiba
tk8a65d.pdf

TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

..2. Size:253K inchange semiconductor
tk8a65d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65DITK8A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

8.1. Size:312K toshiba
tk8a65w.pdf

TK8A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A65WTK8A65WTK8A65WTK8A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.53 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancemen

8.2. Size:253K inchange semiconductor
tk8a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65WITK8A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.53 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:264K toshiba
tk8a60w.pdf

TK8A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A60WTK8A60WTK8A60WTK8A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

9.2. Size:261K toshiba
tk8a60w5.pdf

TK8A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8A60W5TK8A60W5TK8A60W5TK8A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super

9.3. Size:197K toshiba
tk8a60da.pdf

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.4. Size:253K inchange semiconductor
tk8a60da.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A60DAITK8A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: