All MOSFET. TK8A65D Datasheet

 

TK8A65D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK8A65D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Maximum Drain-Source On-State Resistance (Rds): 0.84 Ohm

Package: TO220SIS

TK8A65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8A65D Datasheet (PDF)

0.1. tk8a65d.pdf Size:191K _toshiba

TK8A65D
TK8A65D

TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

0.2. tk8a65d.pdf Size:253K _inchange_semiconductor

TK8A65D
TK8A65D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65D,ITK8A65D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

 8.1. tk8a65w.pdf Size:312K _toshiba

TK8A65D
TK8A65D

TK8A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK8A65W TK8A65W TK8A65W TK8A65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.53 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancemen

8.2. tk8a65w.pdf Size:253K _inchange_semiconductor

TK8A65D
TK8A65D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65W, ITK8A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.53Ω (typ.) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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