TPC6109-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = -1

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)

TPC6108 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6108 TENTATIVENotebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 50 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.4 S (typ.) fs Low leakage cur

TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS =

TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement mode: Vth

TPC6104 PMOS (U-MOSIII) TPC6104 PC : mm : R = 33 m () DS (ON) : |Yfs| = 12 S () :

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 48 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.5 to -1.2 V