All MOSFET. TPC6109-H Datasheet

 

TPC6109-H Datasheet and Replacement


   Type Designator: TPC6109-H
   Marking Code: S3J
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: SOT6 VS6
      - MOSFET Cross-Reference Search

 

TPC6109-H Datasheet (PDF)

 ..1. Size:260K  toshiba
 tpc6109-h.pdf pdf_icon

TPC6109-H

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = -1

 8.1. Size:220K  toshiba
 tpc6106.pdf pdf_icon

TPC6109-H

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40

 8.2. Size:204K  toshiba
 tpc6105.pdf pdf_icon

TPC6109-H

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V

 8.3. Size:192K  toshiba
 tpc6107.pdf pdf_icon

TPC6109-H

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - TPC6109-H MOSFET datasheet

 TPC6109-H cross reference
 TPC6109-H equivalent finder
 TPC6109-H lookup
 TPC6109-H substitution
 TPC6109-H replacement

 

 
Back to Top

 


 
.