TPC8046-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8046-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: SOP8
- Selección de transistores por parámetros
TPC8046-H Datasheet (PDF)
tpc8046-h.pdf

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
tpc8042.pdf

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8047-h.pdf

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8041.pdf

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: WPM2081 | 2SK3236 | ELM51402FA | HF10N60 | AOB2146L | SSF11NS70UF | P2610ADG
History: WPM2081 | 2SK3236 | ELM51402FA | HF10N60 | AOB2146L | SSF11NS70UF | P2610ADG



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