TPC8046-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8046-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8046-H MOSFET
TPC8046-H Datasheet (PDF)
tpc8046-h.pdf

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
tpc8042.pdf

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8047-h.pdf

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8041.pdf

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
Otros transistores... TPC6113 , TPC6130 , TPC8027 , TPC8028 , TPC8029 , TPC8041 , TPC8042 , TPC8045-H , 13N50 , TPC8047-H , TPC8048-H , TPC8049-H , TPC8050-H , TPC8051-H , TPC8052-H , TPC8053-H , TPC8055-H .
History: PTS2017 | DMT10N60 | HYG082N03LR1C1 | SQM110N06-06 | AP10N10K | SWI1N60 | SI4N60-TM3-T
History: PTS2017 | DMT10N60 | HYG082N03LR1C1 | SQM110N06-06 | AP10N10K | SWI1N60 | SI4N60-TM3-T



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