TPC8046-H. Аналоги и основные параметры

Наименование производителя: TPC8046-H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.3 ns

Cossⓘ - Выходная емкость: 600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm

Тип корпуса: SOP8

Аналог (замена) для TPC8046-H

- подборⓘ MOSFET транзистора по параметрам

 

TPC8046-H даташит

 ..1. Size:208K  toshiba
 tpc8046-h.pdf pdf_icon

TPC8046-H

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H

 8.1. Size:200K  toshiba
 tpc8042.pdf pdf_icon

TPC8046-H

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr

 8.2. Size:208K  toshiba
 tpc8047-h.pdf pdf_icon

TPC8046-H

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H

 8.3. Size:194K  toshiba
 tpc8041.pdf pdf_icon

TPC8046-H

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren

ПОКАЗАТЬ ЕЩЁ

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