TPC8047-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8047-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.4 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm

Encapsulados: SOP8

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TPC8047-H datasheet

 ..1. Size:208K  toshiba
 tpc8047-h.pdf pdf_icon

TPC8047-H

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H

 8.1. Size:200K  toshiba
 tpc8042.pdf pdf_icon

TPC8047-H

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr

 8.2. Size:208K  toshiba
 tpc8046-h.pdf pdf_icon

TPC8047-H

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H

 8.3. Size:194K  toshiba
 tpc8041.pdf pdf_icon

TPC8047-H

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren

MOSTRAR MÁS

Otros transistores... TPC6130, TPC8027, TPC8028, TPC8029, TPC8041, TPC8042, TPC8045-H, TPC8046-H, RFP50N06, TPC8048-H, TPC8049-H, TPC8050-H, TPC8051-H, TPC8052-H, TPC8053-H, TPC8055-H, TPC8056-H