TPC8047-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPC8047-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 440 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0076 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8047-H
TPC8047-H Datasheet (PDF)
tpc8047-h.pdf

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8042.pdf

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8046-h.pdf

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
tpc8041.pdf

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
Другие MOSFET... TPC6130 , TPC8027 , TPC8028 , TPC8029 , TPC8041 , TPC8042 , TPC8045-H , TPC8046-H , SKD502T , TPC8048-H , TPC8049-H , TPC8050-H , TPC8051-H , TPC8052-H , TPC8053-H , TPC8055-H , TPC8056-H .
History: SML1001RAN | IRF1405SPBF | SSG4543C | HPM3401 | SMK1060P | FQB5N20TM | GWM13S65YRE
History: SML1001RAN | IRF1405SPBF | SSG4543C | HPM3401 | SMK1060P | FQB5N20TM | GWM13S65YRE



Список транзисторов
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