TPC8057-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8057-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.7 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8057-H MOSFET
TPC8057-H Datasheet (PDF)
tpc8057-h.pdf

TPC8057-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8057-HTPC8057-HTPC8057-HTPC8057-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8053-h.pdf

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 m (typ.)
tpc8059-h.pdf

TPC8059-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8059-HTPC8059-HTPC8059-HTPC8059-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8050-h.pdf

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
Otros transistores... TPC8048-H , TPC8049-H , TPC8050-H , TPC8051-H , TPC8052-H , TPC8053-H , TPC8055-H , TPC8056-H , 7N60 , TPC8058-H , TPC8059-H , TPC8061-H , TPC8062-H , TPC8063-H , TPC8064-H , TPC8065-H , TPC8066-H .
History: STB70NF3LL | FDS5670 | 80N10 | AOWF600A70 | ELM34404AA | APTM120U10SCAVG
History: STB70NF3LL | FDS5670 | 80N10 | AOWF600A70 | ELM34404AA | APTM120U10SCAVG



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
c3856 | 30100 transistor | 2sc1675 | k117 transistor | 2sc2291 | bc139 | 2sc1398 | 2sd218