TPC8082 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8082

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: SOP8

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TPC8082 datasheet

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 tpc8082.pdf pdf_icon

TPC8082

TPC8082 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8082 TPC8082 TPC8082 TPC8082 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.1 m (typ.) (VGS = 10 V) (3) Low leakage curren

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 tpc8084.pdf pdf_icon

TPC8082

TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.4 m (typ

 8.2. Size:222K  toshiba
 tpc8081.pdf pdf_icon

TPC8082

TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (3) Low leakage curren

 8.3. Size:220K  toshiba
 tpc8087.pdf pdf_icon

TPC8082

TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.7 m (typ.) (VGS = 10 V) (3) Low leakage curren

MOSTRAR MÁS

Otros transistores... TPC8067-H, TPC8073, TPC8074, TPC8075, TPC8076, TPC8078, TPC8080, TPC8081, EMB04N03H, TPC8084, TPC8085, TPC8086, TPC8087, TPC8088, TPC8092, TPC8120, TPC8123