TPC8082. Аналоги и основные параметры
Наименование производителя: TPC8082
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 530 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8082
- подборⓘ MOSFET транзистора по параметрам
TPC8082 даташит
tpc8082.pdf
TPC8082 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8082 TPC8082 TPC8082 TPC8082 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.1 m (typ.) (VGS = 10 V) (3) Low leakage curren
tpc8084.pdf
TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.4 m (typ
tpc8081.pdf
TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (3) Low leakage curren
tpc8087.pdf
TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.7 m (typ.) (VGS = 10 V) (3) Low leakage curren
Другие IGBT... TPC8067-H, TPC8073, TPC8074, TPC8075, TPC8076, TPC8078, TPC8080, TPC8081, EMB04N03H, TPC8084, TPC8085, TPC8086, TPC8087, TPC8088, TPC8092, TPC8120, TPC8123
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