TPC8082 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPC8082
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 530 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: SOP8
TPC8082 Datasheet (PDF)
tpc8082.pdf
TPC8082MOSFETs Silicon N-Channel MOS (U-MOS)TPC8082TPC8082TPC8082TPC80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8084.pdf
TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ
tpc8081.pdf
TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8087.pdf
TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8085.pdf
TPC8085MOSFETs Silicon N-Channel MOS (U-MOS)TPC8085TPC8085TPC8085TPC80851. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m
tpc8086.pdf
TPC8086MOSFETs Silicon N-Channel MOS (U-MOS)TPC8086TPC8086TPC8086TPC80861. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.0 m
tpc8089-h.pdf
TPC8089-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8089-HTPC8089-HTPC8089-HTPC8089-H1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.6 nC (typ.)(3) Low drain-source on-resistanc
tpc8080.pdf
TPC8080MOSFETs Silicon N-Channel MOS (U-MOS)TPC8080TPC8080TPC8080TPC80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8088.pdf
TPC8088MOSFETs Silicon N-Channel MOS (U-MOS)TPC8088TPC8088TPC8088TPC80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(3) Low leakage curren
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFM044
History: IRFM044
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918