TPC8134 Todos los transistores

 ..1. Size:264K  toshiba
 tpc8134.pdf

TPC8134 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8134 TPC8134 TPC8134 TPC8134 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 39 m (typ.) (VGS = -10

 8.1. Size:256K  toshiba
 tpc8133.pdf

TPC8133 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8133 TPC8133 TPC8133 TPC8133 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 11 m (typ.) (VGS = -10

 8.2. Size:260K  toshiba
 tpc8132.pdf

TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8132 TPC8132 TPC8132 TPC8132 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 20 m (typ.) (VGS = -10

 9.1. Size:215K  toshiba
 tpc8127.pdf

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V (

 9.2. Size:215K  toshiba
 tpc8108.pdf

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 9.5 m (typ.) DS (ON) High forward transfer admittance Y = 24 S (typ.) fs Low leakage

 9.3. Size:276K  toshiba
 tpc8122.pdf

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8122 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 6.3 m (typ.) High forward transfer admittance Yfs = 30S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V

 9.4. Size:299K  toshiba
 tpc8126.pdf

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 9.5. Size:214K  toshiba
 tpc8117.pdf

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -

 9.6. Size:216K  toshiba
 tpc8110.pdf

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage

 9.7. Size:320K  toshiba
 tpc8105-h.pdf

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 32 nC (typ.) Low drain-source ON resistan

 9.8. Size:278K  toshiba
 tpc8114.pdf

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre

 9.9. Size:274K  toshiba
 tpc8112.pdf

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren

 9.10. Size:280K  toshiba
 tpc8115.pdf

 9.11. Size:272K  toshiba
 tpc8123.pdf

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.0 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max

 9.12. Size:315K  toshiba
 tpc8104-h.pdf

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 17 nC (typ.) Low drain-source ON resistan

 9.13. Size:224K  toshiba
 tpc8107.pdf

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 5.5 m (typ.) DS (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage

 9.14. Size:279K  toshiba
 tpc8116-h.pdf

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 9.7 nC (typ.) Low

 9.15. Size:215K  toshiba
 tpc8109.pdf

TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 14 m (typ.) DS (ON) High forward transfer admittance Y = 19 S (typ.) fs Low leakage c

 9.16. Size:231K  toshiba
 tpc8111.pdf

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 8.1 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage curre

 9.17. Size:289K  toshiba
 tpc8120.pdf

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.6 m (typ.) High forward transfer admittance Yfs =80 S (typ.) Low leakage current IDSS = -10 A (max)

 9.18. Size:260K  toshiba
 tpc8129.pdf

TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 17 m (typ.) (VGS = -

 9.19. Size:221K  toshiba
 tpc8125.pdf

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 9.20. Size:257K  toshiba
 tpc8124.pdf

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 6.1 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -40 V) Enhancement mode Vth = -0.8 to -2.0 V

 9.21. Size:256K  toshiba
 tpc8119.pdf

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit mm Load switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current IDSS

 9.22. Size:196K  toshiba
 tpc8118.pdf

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8118 Notebook PC Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -

 9.23. Size:216K  toshiba
 tpc8128.pdf

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.9 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 9.24. Size:273K  toshiba
 tpc8113.pdf

TPC8113 P MOS (U-MOS IV) TPC8113 2 mm PC RDS (ON) = 8 m ( ) Yfs = 23 S (

 9.25. Size:326K  toshiba
 tpc8121.pdf

 9.26. Size:818K  cn vbsemi
 tpc8127.pdf

TPC8127 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

 9.27. Size:865K  cn vbsemi
 tpc8103.pdf

TPC8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 9.28. Size:818K  cn vbsemi
 tpc8123.pdf

TPC8123 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

 9.29. Size:818K  cn vbsemi
 tpc8107.pdf

TPC8107 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

 9.30. Size:874K  cn vbsemi
 tpc8129.pdf

TPC8129 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

 9.31. Size:1400K  cn vbsemi
 tpc8104.pdf

TPC8104 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V

 9.32. Size:818K  cn vbsemi
 tpc8121.pdf

TPC8121 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G