TPC8134
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8134
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8
nS
Cossⓘ - Capacitancia
de salida: 130
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052
Ohm
Paquete / Cubierta:
SOP8
- Selección de transistores por parámetros
TPC8134
Datasheet (PDF)
..1. Size:264K toshiba
tpc8134.pdf 
TPC8134MOSFETs Silicon P-Channel MOS (U-MOS)TPC8134TPC8134TPC8134TPC81341. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 39 m (typ.) (VGS = -10
8.1. Size:256K toshiba
tpc8133.pdf
TPC8133MOSFETs Silicon P-Channel MOS (U-MOS)TPC8133TPC8133TPC8133TPC81331. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 11 m (typ.) (VGS = -10
8.2. Size:260K toshiba
tpc8132.pdf
TPC8132MOSFETs Silicon P-Channel MOS (U-MOS)TPC8132TPC8132TPC8132TPC81321. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 20 m (typ.) (VGS = -10
9.1. Size:215K toshiba
tpc8127.pdf
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (
9.2. Size:215K toshiba
tpc8108.pdf
TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 9.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 24 S (typ.) fs Low leakage
9.3. Size:276K toshiba
tpc8122.pdf
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8122 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.3 m (typ.) High forward transfer admittance: |Yfs| = 30S (typ.) Low leakage current: IDSS = -10A (max) (VDS = -30 V
9.4. Size:299K toshiba
tpc8126.pdf
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
9.5. Size:214K toshiba
tpc8117.pdf
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -
9.6. Size:216K toshiba
tpc8110.pdf
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage
9.7. Size:320K toshiba
tpc8105-h.pdf
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan
9.8. Size:278K toshiba
tpc8114.pdf
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre
9.9. Size:274K toshiba
tpc8112.pdf
TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8112 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage curren
9.10. Size:280K toshiba
tpc8115.pdf
TPC8115 PMOS (U-MOS IV) TPC8115 2 : mm PC : RDS (ON) = 6.5 m () : |Yfs| = 40 S (
9.11. Size:272K toshiba
tpc8123.pdf
TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max
9.12. Size:315K toshiba
tpc8104-h.pdf
TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan
9.13. Size:224K toshiba
tpc8107.pdf
TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 5.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 31 S (typ.) fs Low leakage
9.14. Size:279K toshiba
tpc8116-h.pdf
TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low
9.15. Size:215K toshiba
tpc8109.pdf
TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 14 m (typ.) DS (ON) High forward transfer admittance: |Y | = 19 S (typ.) fs Low leakage c
9.16. Size:231K toshiba
tpc8111.pdf
TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage curre
9.17. Size:289K toshiba
tpc8120.pdf
TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = -10 A (max)
9.18. Size:260K toshiba
tpc8129.pdf
TPC8129MOSFETs Silicon P-Channel MOS (U-MOS)TPC8129TPC8129TPC8129TPC81291. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 17 m (typ.) (VGS = -
9.19. Size:221K toshiba
tpc8125.pdf
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
9.20. Size:257K toshiba
tpc8124.pdf
TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V
9.21. Size:256K toshiba
tpc8119.pdf
TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mmLoad switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS
9.22. Size:196K toshiba
tpc8118.pdf
TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -
9.23. Size:216K toshiba
tpc8128.pdf
TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 3.9 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
9.24. Size:273K toshiba
tpc8113.pdf
TPC8113 PMOS (U-MOS IV) TPC8113 2 : mm PC : RDS (ON) = 8 m () : |Yfs| = 23 S (
9.25. Size:326K toshiba
tpc8121.pdf
TPC8121 PMOS (U-MOS) TPC8121 PC : mm 2 : RDS (ON) = 8.0 m () : |Yfs| = 23 S (
9.26. Size:818K cn vbsemi
tpc8127.pdf
TPC8127www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
9.27. Size:865K cn vbsemi
tpc8103.pdf
TPC8103www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
9.28. Size:818K cn vbsemi
tpc8123.pdf
TPC8123www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
9.29. Size:818K cn vbsemi
tpc8107.pdf
TPC8107www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
9.30. Size:874K cn vbsemi
tpc8129.pdf
TPC8129www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG
9.31. Size:1400K cn vbsemi
tpc8104.pdf
TPC8104www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop V
9.32. Size:818K cn vbsemi
tpc8121.pdf
TPC8121www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
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History: HUFA76423S3ST
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