TPC8134 Specs and Replacement
Type Designator: TPC8134
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ -
Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
TPC8134 datasheet
..1. Size:264K toshiba
tpc8134.pdf 
TPC8134 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8134 TPC8134 TPC8134 TPC8134 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 39 m (typ.) (VGS = -10... See More ⇒
8.1. Size:256K toshiba
tpc8133.pdf
TPC8133 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8133 TPC8133 TPC8133 TPC8133 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 11 m (typ.) (VGS = -10... See More ⇒
8.2. Size:260K toshiba
tpc8132.pdf
TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8132 TPC8132 TPC8132 TPC8132 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance RDS(ON) = 20 m (typ.) (VGS = -10... See More ⇒
9.1. Size:215K toshiba
tpc8127.pdf
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V (... See More ⇒
9.2. Size:215K toshiba
tpc8108.pdf
TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 9.5 m (typ.) DS (ON) High forward transfer admittance Y = 24 S (typ.) fs Low leakage ... See More ⇒
9.3. Size:276K toshiba
tpc8122.pdf
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8122 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 6.3 m (typ.) High forward transfer admittance Yfs = 30S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V... See More ⇒
9.4. Size:299K toshiba
tpc8126.pdf
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V... See More ⇒
9.5. Size:214K toshiba
tpc8117.pdf
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -... See More ⇒
9.6. Size:216K toshiba
tpc8110.pdf
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage ... See More ⇒
9.7. Size:320K toshiba
tpc8105-h.pdf
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 32 nC (typ.) Low drain-source ON resistan... See More ⇒
9.8. Size:278K toshiba
tpc8114.pdf
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre... See More ⇒
9.9. Size:274K toshiba
tpc8112.pdf
TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren... See More ⇒
9.11. Size:272K toshiba
tpc8123.pdf
TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.0 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max... See More ⇒
9.12. Size:315K toshiba
tpc8104-h.pdf
TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 17 nC (typ.) Low drain-source ON resistan... See More ⇒
9.13. Size:224K toshiba
tpc8107.pdf
TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 5.5 m (typ.) DS (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage ... See More ⇒
9.14. Size:279K toshiba
tpc8116-h.pdf
TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 9.7 nC (typ.) Low ... See More ⇒
9.15. Size:215K toshiba
tpc8109.pdf
TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 14 m (typ.) DS (ON) High forward transfer admittance Y = 19 S (typ.) fs Low leakage c... See More ⇒
9.16. Size:231K toshiba
tpc8111.pdf
TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 8.1 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage curre... See More ⇒
9.17. Size:289K toshiba
tpc8120.pdf
TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.6 m (typ.) High forward transfer admittance Yfs =80 S (typ.) Low leakage current IDSS = -10 A (max)... See More ⇒
9.18. Size:260K toshiba
tpc8129.pdf
TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 17 m (typ.) (VGS = -... See More ⇒
9.19. Size:221K toshiba
tpc8125.pdf
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V ... See More ⇒
9.20. Size:257K toshiba
tpc8124.pdf
TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 6.1 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -40 V) Enhancement mode Vth = -0.8 to -2.0 V... See More ⇒
9.21. Size:256K toshiba
tpc8119.pdf
TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit mm Load switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current IDSS... See More ⇒
9.22. Size:196K toshiba
tpc8118.pdf
TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8118 Notebook PC Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -... See More ⇒
9.23. Size:216K toshiba
tpc8128.pdf
TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.9 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V... See More ⇒
9.24. Size:273K toshiba
tpc8113.pdf
TPC8113 P MOS (U-MOS IV) TPC8113 2 mm PC RDS (ON) = 8 m ( ) Yfs = 23 S ( ... See More ⇒
9.26. Size:818K cn vbsemi
tpc8127.pdf
TPC8127 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒
9.27. Size:865K cn vbsemi
tpc8103.pdf
TPC8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs ... See More ⇒
9.28. Size:818K cn vbsemi
tpc8123.pdf
TPC8123 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒
9.29. Size:818K cn vbsemi
tpc8107.pdf
TPC8107 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒
9.30. Size:874K cn vbsemi
tpc8129.pdf
TPC8129 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G... See More ⇒
9.31. Size:1400K cn vbsemi
tpc8104.pdf
TPC8104 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V... See More ⇒
9.32. Size:818K cn vbsemi
tpc8121.pdf
TPC8121 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒
Detailed specifications: TPC8124, TPC8125, TPC8126, TPC8127, TPC8128, TPC8129, TPC8132, TPC8133, IRFP460, TPC8221-H, TPC8223-H, TPC8224-H, TPC8407, TPC8408, TPC8A03-H, TPC8A04-H, TPC8A05-H
Keywords - TPC8134 MOSFET specs
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